Wolfspeed, Inc. is a leading provider of silicon carbide (SiC) power and radio frequency (RF) solutions. The company was founded in 1985 as Cree Research, Inc. and was spun off as a separate entity in 2015. Wolfspeed is headquartered in Durham, North Carolina, and has additional locations in California, Texas, and China. Wolfspeed's SiC technology is used in a wide range of applications, including electric vehicles, renewable energy, industrial power supplies, and telecommunications. SiC is a semiconductor material that offers superior performance compared to traditional silicon-based solutions. It can operate at higher temperatures, handle higher voltages, and switch faster, resulting in more efficient and reliable systems. In addition to SiC power solutions, Wolfspeed also offers RF solutions for wireless communications and radar systems. Its products include gallium nitride (GaN) transistors and amplifiers, which offer higher power density and efficiency compared to traditional RF technologies. Wolfspeed has a strong focus on research and development, with over 1,000 patents and patent applications. The company invests heavily in its manufacturing capabilities, with a state-of-the-art SiC wafer fabrication facility in New York and a new RF manufacturing facility in North Carolina. Wolfspeed has a diverse customer base, including automotive manufacturers, power electronics companies, and defense contractors. The company has partnerships with leading companies in the industry, such as Volkswagen, ABB, and Lockheed Martin. In 2019, Wolfspeed was acquired by Infineon Technologies AG, a leading semiconductor company based in Germany. The acquisition has allowed Wolfspeed to expand its global reach and accelerate its growth in the SiC and RF markets. Overall, Wolfspeed is a leading provider of SiC power and RF solutions, with a strong focus on innovation and manufacturing excellence. Its technology is driving the next generation of efficient and reliable systems in a wide range of industries.

>C3M0280090D
:C3M0280090D
:Transistors - FETs, MOSFETs - Single
52.29
>C3M0120090J
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116.41
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:Transistors - FETs, MOSFETs - Single
125.96
>C3M0075120J
:C3M0075120J
:Transistors - FETs, MOSFETs - Single
149.7
>C2M0080120D
:C2M0080120D
:Transistors - FETs, MOSFETs - Single
203.76
>C3M0025065D
:C3M0025065D
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235.44
>C3M0021120D
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:Transistors - FETs, MOSFETs - Single
311.98
>C3M0030090K
:C3M0030090K
:Transistors - FETs, MOSFETs - Single
332.68
>C3M0015065D
:C3M0015065D
:Transistors - FETs, MOSFETs - Single
387.09
>E3M0120090J
:E3M0120090J
:Transistors - FETs, MOSFETs - Single
98.85
>C3M0120090J-TR
:C3M0120090J-TR
:Transistors - FETs, MOSFETs - Single
99.68
>C3M0040120J1-TR
:C3M0040120J1-TR
:Transistors - FETs, MOSFETs - Single
205.46
>E3M0280090D
:E3M0280090D
:Transistors - FETs, MOSFETs - Single
60.15
>E3M0120090D
:E3M0120090D
:Transistors - FETs, MOSFETs - Single
96.31

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