TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 1.3mΩ |
Rated Power Dissipation: | 375W |
Qg Gate Charge: | 460nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 409A |
Turn-on Delay Time: | 32ns |
Turn-off Delay Time: | 160ns |
Rise Time: | 105ns |
Fall Time: | 100ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3.9V |
Technology: | Si |
Height - Max: | 9.02mm |
Length: | 10.67mm |
Input Capacitance: | 14240pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |