-

RJH1DF7RDPQ-80#T2

  • RJH1DF7RDPQ-80#T2
  • image of Transistors - IGBTs - Single>RJH1DF7RDPQ-80#T2
RJH1DF7RDPQ-80#T2
Transistors - IGBTs - Single
Renesas
RJH1DF7 - INSUL
-
Bulk
-

54

6.17

333.18



RJH1DF7 - INSULATED GATE BIPOLAR

TYPEDESCRIPTION
MfrRenesas
Series-
PackageBulk
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1350 V
Current - Collector (Ic) (Max)60 A
Vce(on) (Max) @ Vge, Ic2.55V @ 15V, 35A
Power - Max250 W
Switching Energy-
Input TypeStandard
Td (on/off) @ 25°C58ns/144ns
Test Condition600V, 35A, 5Ohm, 15V
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

captcha

+86-19928849014

wenny.he@huizdt.com

点击这里给我发消息 点击这里给我发消息
0