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IRF8313PBF

  • IRF8313PBF
  • image of Transistors - FETs, MOSFETs - Arrays>IRF8313PBF
IRF8313PBF
Transistors - FETs, MOSFETs - Arrays
International Rectifier
HEXFET POWER MO
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Tube
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HEXFET POWER MOSFET

TYPEDESCRIPTION
MfrInternational Rectifier
SeriesHEXFET®
PackageTube
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Rds On (Max) @ Id, Vgs15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 15V
Power - Max2W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Base Product NumberIRF8313

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