-

IRF8915PBF

  • IRF8915PBF
  • image of Transistors - FETs, MOSFETs - Arrays>IRF8915PBF
IRF8915PBF
Transistors - FETs, MOSFETs - Arrays
International Rectifier
HEXFET POWER MO
-
Tube
-


HEXFET POWER MOSFET

TYPEDESCRIPTION
MfrInternational Rectifier
SeriesHEXFET®
PackageTube
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.9A
Rds On (Max) @ Id, Vgs18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Base Product NumberIRF89

captcha

+86-19928849014

wenny.he@huizdt.com

点击这里给我发消息 点击这里给我发消息
0