-

IRFH4257DTRPBF

  • IRFH4257DTRPBF
  • image of Transistors - FETs, MOSFETs - Arrays>IRFH4257DTRPBF
IRFH4257DTRPBF
Transistors - FETs, MOSFETs - Arrays
International Rectifier
IRFH4257 - HEXF
-
Bulk
-

306

1.08

330.48



IRFH4257 - HEXFET POWER MOSFET

TYPEDESCRIPTION
MfrInternational Rectifier
SeriesHEXFET®
PackageBulk
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C25A
Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1321pF @ 13V
Power - Max25W, 28W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackageDual PQFN (5x4)
Base Product NumberIRFH4257

captcha

+86-19928849014

wenny.he@huizdt.com

点击这里给我发消息 点击这里给我发消息
0